Displacement Talbot lithography for nano-engineering of III-nitride materials

Talbot lithography: Self-imaging of complex structures

The authors present a self-imaging lithographic technique, capable of patterning large area periodic structures of arbitrary content with nanoscale resolution. They start from the original concept of Talbot imaging of binary gratings—and introduce the generalized Talbot imaging GTI where periodic structures of arbitrary shape and content form high-definition self-images. This effect can be used...

Nanosphere Lithography for Nitride Semiconductors

Analysis of a scheme for de-magnified Talbot lithography

Related Articles Thermally reflowed ZEP 520A for gate length reduction and profile rounding in T-gate fabrication J. Vac. Sci. Technol. B 30, 051603 (2012) Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme J. Vac. Sci. Technol. B 30, 052202 (2012) Resist–substrate interface tailoring for generating high-density arrays of Ge and ...

Talbot Lithography as an Alternative for Contact Lithography for Submicron Features

In this paper we show that using optical photolithography it’s possible to obtain submicron features for periodic structures using the Talbot effect. To use the Talbot effect without the need of an absolute distance measurement between the mask and the wafer we integrate over several exposures for varying wafer mask distances. Here we discuss the salient features of ‘integrated Talbot lithograp...

Recent Advances in III-Nitride Ultraviolet Photonic Materials and Devices

This paper summarizes some of the recent advances made on III-nitride ultraviolet photonics materials and devices. In particular, the growth and characterization of AlGaN alloys are discussed in detail. It was shown that AlGaN could be made n-type for x up to 1 (pure AlN). Time-resolved photoluminescence (PL) studies carried out on these materials have shown that Si-doping reduces the effect of...